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GD25LE05CSJG 数据表(PDF) 59 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LE05CSJG 数据表(HTML) 59 Page - GigaDevice Semiconductor (Beijing) Inc. |
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59 / 75 page ![]() 1.8V Uniform Sector Dual and Quad Serial Flash GD25LE40C/20C/10C/05C 59 tBE1 Block Erase Time (32K Bytes) 0.15 1.8 s tBE2 Block Erase Time (64K Bytes) 0.18 3.2 s tCE Chip Erase Time (GD25LE40C) 1.25 6 s tCE Chip Erase Time (GD25LE20C) 0.8 3 s tCE Chip Erase Time (GD25LE10C) 0.4 1.5 s tCE Chip Erase Time (GD25LE05C) 0.2 1.5 s Note: 1. Typical values given for TA=25°C. 2. Value guaranteed by design and/or characterization, not 100% tested in production. 3. Max. Value 4KB tSE with<50K cycles is 200ms and >50K&<100K cycles is 400ms. |
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