GD25LE10CEEG datasheet(4/75 Pages) GIGADEVICE

4 / 75 page

1.8V Uniform Sector

Dual and Quad Serial Flash

GD25LE40C/20C/10C/05C

FEATURES

◆ 4M/2M/1M/512K-bit Serial Flash

◆ Fast Program/Erase Speed

- 512K/256K/128K/64K-byte

- Page Program time: 0.7ms typical

- 256 bytes per programmable page

- Sector Erase time: 40ms typical

- Block Erase time: 0.15/0.18s typical

◆ Standard, Dual, Quad SPI

- Chip Erase time: 1.25/0.8/0.4/0.2s typical

- Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

- Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#

◆ Flexible Architecture

- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3

- Uniform Sector of 4K-byte

- Uniform Block of 32/64K-byte

◆ High Speed Clock Frequency

- Erase/Program Suspend/Resume

- 104MHz for fast read with 30PF load

- Dual I/O Data transfer up to 208Mbits/s

◆ Low Power Consumption

- Quad I/O Data transfer up to 416Mbits/s

- 9uA typical stand-by current

- 0.2uA typical power-down current

◆ Allows XIP (execute in place) Operation

- Continuous Read With 8/16/32/64-byte Wrap

◆ Advanced Security Features

- 128-bit Unique ID for each device

◆ Software/Hardware Write Protection

- 3x512-Byte Security Registers With OTP Lock

-Write protect all/portion of memory via software

-Enable/Disable protection with WP# Pin

◆ Single Power Supply Voltage

-Top/Bottom Block protection

- Full voltage range:1.65~2.1V

◆ Minimum 100,000 Program/Erase Cycles

◆ Data Retention

- 20-year data retention typical

GD25LE10CEEG 数据表(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25LE10CEEG 数据表(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

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