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GPU200HF120D2 数据表(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

部件名 GPU200HF120D2
功能描述  IGBT Module
PDF  3 Pages
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制造商  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
网页  http://www.hmsemi.com/
标志 HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

GPU200HF120D2 数据表(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  GPU200HF120D2 Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd GPU200HF120D2 Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd GPU200HF120D2 Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd  
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- 2 -
Rev1. 2017
Total 3 Pages
GPU200HF120D2
Electrical Characteristicsof IGBT(T
C=25℃unless otherwise noted )
Symbol
Parameter
TestConditions
Min.
Typ.
Max.
Units
BV
CES
Collector-EmitterBreakdownVoltage
V
GE=0V,IC= 250µA
1200
-
-
V
I
CES
Collector-Emitter Leakage Current
V
CE= 1200V, VGE=0V
-
-
250
µA
I
GES
Gate Leakage Current, Forward
V
GE=30V, VCE=0V
-
-
100
nA
Gate Leakage Current, Reverse
V
GE= -30V, VCE=0V
-
-
-100
nA
V
GE(th)
GateThresholdVoltage
V
GE=VCE,IC=250µA
4.5
-
5.7
V
V
CE(sat)
Collector-Emitter Saturation Voltage
V
GE=15V,IC=200A
-
3.2
3.6
V
Qg
Total Gate Charge
VCC=960V，VGE=15V
IC=200A
1740
nC
t d(on)
Turn-on Delay Time
VCC=600V
VGE=±15V
IC=200A
RG=10
Inductive Load
TC=25℃
-
145
-
ns
t r
Turn-on Rise Time
-
133
-
ns
t d(off)
Turn-off Delay Time
-
985
-
ns
t f
Turn-off Fall Time
-
108
-
ns
Eon
Turn-on Switching Loss
-
18
-
mJ
Eoff
Turn-off Switching Loss
-
13
-
mJ
Ets
Total Switching Loss
-
31
-
mJ
Cies
InputCapacitance
VCE=25V
VGE=0V
f = 1MHz
-
17.5
-
nF
Coes
OutputCapacitance
-
2.4
-
nF
Cres
ReverseTransferCapacitance
-
1.4
-
nF
RGint
Integrated gate resistor
f=1M;Vpp=1V
2.5
Ω
Electrical Characteristics of Diode(T
C=25℃unless otherwise noted)
Symbol
Parameter
TestConditions
Min.
Typ.
Max.
Units
V
F
Diode ForwardVoltage
I
F=200A
-
1.9
V
t r r
Diode Reverse Recovery Time
VCE = 600V
I
F=200A
dIF/dt = 500A/µs
-
158
ns
I r r
Diode peak Reverse Recovery Current
-
105
A
Qr r
Diode Reverse Recovery Charge
-
9.5
μC
Notes：
1.Repetitive Rating: Pulse width limited by maximum junction temperature



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