HM2P10PR datasheet(1/3 Pages) HMSEMI

部件名	HM2P10PR

功能描述	P-Channel Enhancement Mode MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

网页	http://www.hmsemi.com/

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1 / 3 page

P-Channel Enhancement Mode MOSFET

FEATURES

◆

RDS(Typ.) < 250 mΩ@VGS = -10 V

◆

RDS(Typ.) < 300 mΩ@VGS = -4.5V

◆

Gross Die = 9600

APPLICATIONS

◆

Battery Charge

◆

Load Switching

◆

Power Converter

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-100

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous @ TA =25°C

ID

-5

A

Drain Current-Pulsed @ TA =25°C

Note1

IDM

-15

A

Maximum Power Dissipation

PD

2.1

W

Storage Temperature Range

TSTG

-55 to +150

°C

Operating Junction Temperature Range

TJ

-55 to +150

°C

Thermal Resistance, Junction-to-Ambient

Note2

RθJA

60

°C/W

D

G

S

Schematic diagram

SOT-89-3L top view

HM2P10PR

Power MOSFET Datasheet

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