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GD25S512MDBIS 数据表(PDF) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25S512MDBIS 数据表(HTML) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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44 / 87 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25S512MD 44 7.19. Sector Erase (SE 20H or 4SE 21H) The Sector Erase (SE) command is erased the all data of the chosen sector. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered by driving CS# low, followed by the command code, and 3-address Byte on SI. Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence. The Sector Erase command sequence: CS# goes low sending Sector Erase command 3-Byte address on SI CS# goes high. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (TB, BP3, BP2, BP1, and BP0) bit is not executed. Figure 38 Sector Erase Sequence Diagram (ADS=0) Figure 39 Sector Erase Sequence Diagram (ADS=1) Figure 40 Sector Erase with 4-Byte Address Sequence Diagram (ADS=0 or ADS=1) Command 0 1 2 3 4 5 6 7 20H CS# SCLK SI 8 9 29 30 31 MSB 2 1 0 24 Bits Address 23 22 Command 0 1 2 3 4 5 6 7 21H CS# SCLK SI 8 9 37 38 39 MSB 2 1 0 32 Bits Address 31 30 Command 0 1 2 3 4 5 6 7 20H CS# SCLK SI 8 9 37 38 39 MSB 2 1 0 32 Bits Address 31 30 |
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