GD25Q64CSJS datasheet(50/74 Pages) GIGADEVICE

部件名	GD25Q64CSJS

功能描述	3.3V Uniform Sector Dual and Quad Serial Flash

PDF	74 Pages

Scroll/Zoom	100%

制造商	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

网页	http://www.gigadevice.com/

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50 / 74 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25Q64C

ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Figure 40. Power-on Timing Diagram

Vcc(max)

Vcc(min)

VWI

tVSL

Chip Selection is not allowed

Device is fully

accessible

Time

Table6. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min

Max

Unit

tVSL

VCC (min) To CS# Low

1.8

VWI

Write Inhibit Voltage

1.5

2.5

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status Register

bits are set to 0, except DRV0 bit (S21) is set to 1.

8.3. ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

-40 to 105

-40 to 125

℃

Storage Temperature

-65 to 150

℃

Applied Input/Output Voltage

-0.6 to VCC+0.4

Transient Input/Output Voltage (note: overshoot)

-2.0 to VCC+2.0

VCC

-0.6 to 4.2

GD25Q64CSJS 数据表(PDF) 50 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25Q64CSJS 数据表(HTML) 50 Page - GigaDevice Semiconductor (Beijing) Inc.

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