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GD25VQ32C 数据表(PDF) 63 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25VQ32C 数据表(HTML) 63 Page - GigaDevice Semiconductor (Beijing) Inc. |
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63 / 64 page ![]() Uniform Sector Dual and Quad Serial Flash GD25VQ32C 63 11. REVISION HISTORY Version No Description Page Date 1.0 Initial Release All 2016-5-20 1.1 Modify Features: Full voltage range:2.1~3.6V Change to 2.3~3.6V Delete DATA RETENTION AND ENDURANCE Delete Output Short Circuit Current:200mA Modify Deep Power-Down Current :0.1~1uA to 1~5uA Add Valid Part Numbers Modify Package Package TFBGA-24BALL (6*4 ball array) Modify Package Package TFBGA-24BALL (5*5 ball array) Modify Package USON8(4*3mm) Change to USON8(3*4mm) P4 P46 P46 P48 P53 P57 P58 P60 2017-5-10 1.2 Modify Icc9 from 400-800uA to 0.6-1.2mA Modify tw max. value from 30ms to 40ms P48 P50 2017-8-9 1.3 Modify VWI form 1.9-2.1V to 1.5-2.3V Modify VCC from “-0.6 to 4.0” to “-0.6 to 4.2” P46 P46 2017-8-31 1.4 Figure 36. Program Security Registers command Sequence Diagram Modify tVSL from 5ms to 1.8ms Modify VWI max value from 2.3V to 2.2V Modify tSE max value from 200/300ms to 300ms Modify tBE1 max value from 0.8/1.6s to 1.6s Modify tBE2 max value from 1.2/2.0s to 2.0s Update Ordering Information Update the description of all packages P36 P46 P46 P50 P50 P50 P52-53 P54-62 2018-12-4 |
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