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HM4922SF 数据表(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

部件名 HM4922SF
功能描述  20V Full-Bridge of MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
网页  http://www.hmsemi.com/
标志 HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM4922SF 数据表(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM4922SF Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 5Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 6Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 7Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 8Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4922SF Datasheet HTML 9Page - Shenzhen Huazhimei Semiconductor Co., Ltd Next Button
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Gate-source voltage
VGS
±12
±12
V
Maximum power dissipation
PD
2.0
2.0
W
Operating junction Temperature range
Tj
-55
—150
-55
—150
℃
Drain Current-Continuous
(Silicon Limited)
TA=25°C
ID
3
-3
A
TA=75°C
2.5
-2.5
Pulsed Drain Current (Package Limited)
IDM
12
-12
A
Power Dissipation
B
TA=25°C
PD
2
2
W
TA=75°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55
—150
℃
N-Channel Electrical Characteristics (T
J=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF Characteristics
Drain-source breakdown voltage
BVDSS
VGS=0V, ID=250µA
20
-
-
V
Zero gate voltage drain current
IDSS
VDS=20V, VGS=0V
-
-
1
µA
Gate-body leakage
IGSS
VDS=0V, VGS=±12V
-
-
±100
nA
ON Characteristics
Gate threshold voltage
VGS(th)
VDS=VGS, ID=250µA
0.5
0.75
1.2
V
Drain-source on-state resistance
RDS(ON)
VGS=4.5V, ID=3A
-
31
50
mΩ
VGS=2.5V, ID=2.8A
-
41
80
Forward transconductance
gfs
VGS=5V, ID=3A
-
5
-
S
Dynamic Characteristics
Input capacitance
CISS
VDS=10V ,VGS=0V
f=1.0MHz
-
240
-
pF
Output capacitance
COSS
-
45
-
Reverse transfer capacitance
CRSS
-
23
-
Gate resistance
Rg
VGS=0V, VDS=0V,
f=1.0MHz
-
3.3
4.9
Ω
Switching Characteristics
Turn-on delay time
tD(ON)
VDD=10V
RL=3.3 ohm
VGEN=4.5V
RGEN=6ohm
-
2.3
-
ns
Rise time
tr
-
3.1
-
Turn-off delay time
tD(OFF)
-
21
-
Fall time
tf
-
2.6
-
Total gate charge
Qg
VDS=10V
ID=3A
VGS=4.5V
-
2.7
-
nC
Gate-source charge
Qgs
-
0.4
-
Gate-drain charge
Qgd
-
0.5
-
Thermal Characteristics
Thermal Resistance junction-to ambient
Rth JA
100
℃/W



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