HM7002DM datasheet(2/5 Pages) HMSEMI

2 / 5 page

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

GS = 0, ID =250µAdc)

V(BR)DSS

–

Vdc

Zero Gate Voltage Drain Current

TJ = 25°C

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C

IDSS

–

1.0

500

µAdc

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

IGSSF

–

1.0

Gate–Body Leakage Current, Reverse

(VGS =–20 Vdc)

IGSSR

–

–1.0

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS,ID = 250 µAdc)

VGS(th)

1.0

1.6

Vdc

On–State Drain Current

(VDS ≥ 2.0 VDS(on),VGS = 10 Vdc)

ID(on)

500

–

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

VDS(on)

–

3.75

0.375

Vdc

Static Drain–Source On–State Resistance

(VGS = 10 V, ID = 500 mAdc)

TC = 25°C

TC = 125°C

(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C

TC = 125°C

rDS(on)

–

1.4

–

1.8

–

7.5

13.5

7.5

13.5

Ohms

Forward Transconductance

(VDS ≥ 2.0 VDS(on),ID = 200 mAdc)

gFS

–

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

–

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

–

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss

–

2.5

5.0

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

(V DD = 25 Vdc , ID ^ 500 mAdc,

td(on)

–

Turn–Off Delay Time

RG = 25 Ω, RL = 50 Ω,Vgen = 10 V)

td(off)

–

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 115 mAdc, V GS = 0 V)

VSD

–

–1.5

Vdc

Source Current Continuous

(Body Diode)

–

–115

mAdc

Source Current Pulsed

ISM

–

–800

mAdc

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

µAdc

Rev .O 2/4

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