IXTY08N100D2

IXTA08N100D2

IXTP08N100D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

330

560

mS

C

iss

325

pF

C

oss

V

24

pF

C

rss

6.5

pF

t

d(on)

28

ns

t

r

57

ns

t

d(off)

34

ns

t

f

48

ns

Q

g(on)

14.6

nC

Q

gs

V

1.2

nC

Q

gd

8.3

nC

R

thJC

2.08

C/W

R

thCS

TO-220

0.50

C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

36

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

SD

I

0.8

1.3

V

t

rr

1.03

μs

I

RM

7.40

A

Q

RM

3.80

μC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V