MBRT400200R datasheet(1/3 Pages) GENESIC

部件名	MBRT400200R

功能描述	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 150 V - 200 V

IF(AV) = 400 A

Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT400150(R)

Unit

Repetitive peak reverse voltage

VRRM

150

V

RMS reverse voltage

VRMS

106

V

DC blocking voltage

VDC

150

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRT400150(R)

Unit

Average forward current (per

pkg)

IF(AV)

400

A

Maximum instantaneous forward

voltage (per leg)

0.88

1

10

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

RΘJC

0.35

°C/W

A

Tj = 100 °C

10

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

VF

Peak forward surge current

(per leg)

IFSM

tp = 8.3 ms, half sine

Silicon Power

Schottky Diode

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

mA

V

MBRT400150 thru MBRT400200R

Tj = 25 °C

IFM = 200 A, Tj = 25 °C

Conditions

200

141

MBRT400200(R)

-55 to 150

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

• Types from 150 V to 200 V V

RRM

TC = 125 °C

MBRT400200(R)

0.35

Tj = 150 °C

0.92

50

400

3000

-55 to 150

Conditions

200

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrt400150.pdf

类似零件编号 - MBRT400200R

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GeneSiC Semiconductor, ...	MBRT400200R	468Kb / 3P	Silicon Power Schottky Diode

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MBRT400200R 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

MBRT400200R 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - MBRT400200R

类似说明 - MBRT400200R

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MBRT400200R 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

MBRT400200R 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - MBRT400200R

类似说明 - MBRT400200R

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1 2 3

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