STTH5R06D datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

STTH5R06

2/9

Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 1.164 x IF(AV) + 0.128 IF

(RMS)

Table 6: Dynamic Characteristics

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

TO-220AC / DPA / D2PAK

3.0

°C/W

TO-220FPAC

5.5

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 125°C

250

VF **

Forward voltage drop

Tj = 25°C

IF = 5A

2.9

Tj = 125°C

1.4

1.8

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = -50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 5A

VR = 400V

dIF/dt = -200 A/µs

5.0

6.0

S factor Softness factor

0.35

Qrr

Reverse recovery

charges

110

tfr

Forward recovery

time

Tj = 25°C IF = 5A

dIF/dt = 40 A/µs

VFR = 1.1 x VFmax

150

VFP

Forward recovery

voltage

Tj = 25°C IF = 5A

dIF/dt = 40 A/µs

VFR = 1.1 x VFmax

4.5

Figure 1: Conduction losses versus average

current

Figure 2: Forward voltage drop versus forward

current

0123

4567

P(W)

δ=tp/T

δ = 0.05 δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

(A)

F(AV)

012

3456

(A)

(V)

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

STTH5R06D 数据表(PDF) 2 Page - STMicroelectronics

STTH5R06D 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

STTH5R06D 数据表(PDF) 2 Page - STMicroelectronics

STTH5R06D 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载