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KBPC5002T 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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KBPC5002T 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 50 V - 400 V IO = 50 A Features KBPC-T/W Package Mechanical Data Parameter Symbol KBPC50005T/W KBPC5001T/W Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol KBPC50005T/W KBPC5001T/W Unit Maximum average forward rectified current IO 50 50 A Peak forward surge current IFSM 400 400 A Maximum instantaneous forward voltage per leg 1.1 1.1 5 5 500 500 Thermal characteristics Typical thermal resistance per leg 1 RΘJA 2.5 2.5 °C/W 1 - Thermal resistance from Junction to Ambient on P.C. board mounting Electrical characteristics at Tc = 25 °C, unless otherwise specified 500 -55 to 150 -55 to 150 -55 to 150 VF 1.1 1.1 KBPC5002T/W Single Phase Silicon Bridge Rectifier • High efficiency • Metal case Case: Mounted in the bridge encapsulation Conditions • Not ESD Sensitive • Silicon junction Mounting: Hole for #10 screw • Types from 50 V to 400 V V RRM KBPC50005T/W thru KBPC5004T/W Tc = 25 °C IF = 25.0 A Conditions KBPC5004T/W 200 140 KBPC5002T/W -55 to 150 Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Polarity: Marked on case Maximum DC reverse current at rated DC blocking voltage per leg IR Tc = 100 °C μA 5 400 280 400 200 Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Tc = 40 °C 50 50 8.3 ms half sine-wave 400 400 KBPC5004T/W 2.5 2.5 5 V 500 1 Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/kbpc50005tw.pdf |
类似零件编号 - KBPC5002T |
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类似说明 - KBPC5002T |
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