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IXFN40N110P 数据表(PDF) 4 Page - IXYS Corporation |
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IXFN40N110P 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXFN40N110P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_40N110P (97-768) 12-15-11-A Fig. 7. Input Admittance 0 5 10 15 20 25 30 35 40 45 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGS - Volts TJ = 125 oC - 40 oC 25 oC Fig. 8. Transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 20 40 60 80 100 120 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 QG - NanoCoulombs VDS = 550V I D = 20A I G = 10mA Fig. 11. Capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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