N-Channel 40V(D-S) MOSFET

HM2318A

02

Mar, 2013-Ver1.0

Symbol

Parameter

Limit

Min

Typ

Max

Unit

STATIC

Drain-Source Breakdown Voltage

40

V

Gate Threshold Voltage

1.0

2.5

V

Gate Body Leakage

±100

nA

Zero Gate Voltage Drain Current

1

μ

A

5.0A

28

Drain-Source On-Resistance

38

Diode Forward Voltage

0.8

1.2

V

DYNAMIC

Qg

Total Gate Charge

5A

16

Qg

Total Gate Charge

8.2

Qgs

Gate-Source Charge

3.6

Qgd

Gate-Drain Charge

5A

3.9

nC

Ciss

Input capacitance

560

Coss

Output Capacitance

70

Crss

Reverse Transfer Capacitance

22

pF

Rg

Gate Resistance

f =1MHz

0.7

Ω

Turn-On Delay Time

12

Turn-On Rise Time

12

Turn-Off Delay Time

37

Turn-Off Fall Time

4

ns

Notes: a. Based on epoxy or solder paste and bond wire Cu 2mil×3(S), Au 1mil ×1(G) on each die of SOT-23 package.

b. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%.

c.

H&M SEMI reserves the right to improve product design, functions and reliability without notice.

Electrical Characteristics

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com