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BDX87C 数据表(PDF) 2 Page - STMicroelectronics |
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BDX87C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.45 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 100 V VCB = 100 V T case = 150 oC 0.5 5 mA mA ICEO Collector Cut-off Current (IB = 0) VCB = 50 V 1 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 100 V VCE(sat) ∗ Collector-emitter Saturation Voltage IC = 6 A IB = 24 mA IC = 12 A IB = 120 mA 2 3 V V VBE(sat) ∗ Base-emitter Saturation Voltage IC = 12 A IB =120 mA 4 V VBE ∗ Base-emitter Voltage IC = 6 A VCE = 3 V 2.8 V hFE ∗ DC Current Gain IC = 5 A VCE = 3 V IC = 6 A VCE = 3 V IC = 12 A VCE = 3 V 1000 750 100 18000 VF ∗ Parallel-diode Forward Voltage IF = 3 A IF = 8 A 2.5 1.8 V V hfe ∗ Small SignalCurrent Gain IC = 5 A VCE = 3 V f = 1MHz 25 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. BDX87C-BDX88C 2/4 |
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