IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA30N25L2 IXTP30N25L2

IXTH30N25L2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

7

11

15

S

C

iss

3200

pF

C

oss

V

430

pF

C

rss

130

pF

t

d(on)

22

ns

t

r

78

ns

t

d(off)

65

ns

t

f

23

ns

Q

g(on)

130

nC

Q

gs

V

22

nC

Q

gd

77

nC

R

thJC

0.35

C/W

R

thCS

(TO-220)

0.50

C/W

(TO-247)

0.21

C/W

Safe Operating Area Specification

Characteristic Values

(T

Min.

Typ.

Max.

SOA

V

214

W

Resistive Switching Times

V

R

Note

1: Pulse test, t

 300s, duty cycle, d  2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

30

A

I

SM

Repetitive, Pulse Width Limited by T

JM

120

A

V

SD

I

1.4

V

t

rr

315

ns

Q

RM

3.1

C

I

RM

19.5

A

I

V