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EV1HMC1132PM5 数据表(PDF) 3 Page - Analog Devices |
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EV1HMC1132PM5 数据表(HTML) 3 Page - Analog Devices |
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3 / 17 page ![]() Data Sheet HMC1132PM5E Rev. 0 | Page 3 of 17 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDD1 = VDD2 = 5 V, quiescent current (IDDQ) = 650 mA, and frequency range = 27 GHz to 29 GHz, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 27 29 GHz GAIN 19 22 dB Gain Variation over Temperature 0.028 dB/°C RETURN LOSS Input 7 dB Output 9 dB POWER Output Power for 1 dB Compression P1dB 26.5 28.5 dBm Saturated Output Power PSAT 29.5 dBm OUTPUT THIRD-ORDER INTERCEPT IP3 37 dBm Measurement taken at 5 V, 650 mA, output power (POUT) per tone = 20 dBm NOISE FIGURE NF 7 dB SUPPLY VOLTAGE VDD 4 6 V QUIESCENT SUPPLY CURRENT IDDQ 500 750 mA Adjust the gate bias voltage (VGG) from −2 V up to 0 V to achieve desired quiescent current (IDDQ) TA = 25°C, VDD1 = VDD2 = 5 V, quiescent current (IDDQ) = 650 mA, and frequency range = 29 GHz to 32 GHz, unless otherwise noted. Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 29 32 GHz GAIN 21 24 dB Gain Variation over Temperature 0.034 dB/°C RETURN LOSS Input 11 dB Output 14 dB POWER Output Power for 1 dB Compression P1dB 27 29 dBm Saturated Output Power PSAT 29.5 dBm OUTPUT THIRD-ORDER INTERCEPT IP3 37 dBm Measurement taken at 5 V, 650 mA, POUT per tone = 20 dBm NOISE FIGURE NF 5.5 dB SUPPLY VOLTAGE VDD 4 6 V QUIESCENT SUPPLY CURRENT IDDQ 500 750 mA Adjust the gate bias voltage (VGG) from −2 V up to 0 V to achieve desired quiescent current (IDDQ) |
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