IRF630MFP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	IRF630MFP

功能描述	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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October 2001

IRF630M

IRF630MFP

N-CHANNEL 200V - 0.35

Ω - 9A TO-220/TO-220FP

MESH OVERLAY™ MOSFET

s

TYPICAL RDS(on) = 0.35 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the compa-

ny’s consolidated strip layout-based MESH OVER-

LAY™ process. This technology matches and

improves the performances compared with standard

parts from various sources.

Isolated TO-220 option simplifies assembly and cuts

risk of accidental short circuit in crowded monitor

PCB’s.

.APPLICATIONS

s

MONITOR DISPLAYS

s

GENERAL PURPOSE SWITCH

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

IRF630M

200 V

< 0.40

Ω

9 A

IRF630FPM

200 V

< 0.40

Ω

9 A

Symbol

Parameter

Value

Unit

IRF630M

IRF630MFP

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

200

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

9

9 (**)

A

ID

Drain Current (continuos) at TC = 100°C

5.7

5.7 (**)

A

IDM (q)

Drain Current (pulsed)

36

A

PTOT

Total Dissipation at TC = 25°C

75

30

W

Derating Factor

0.6

0.24

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(**) Limited only by Maximum Temperature Allowed

INTERNAL SCHEMATIC DIAGRAM

1

2

3

TO-220

1

2

3

TO-220FP

类似零件编号 - IRF630MFP

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF630MFP	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006
VBsemi Electronics Co.,...	IRF630MFP	3Mb / 8P	N-Channel 200 V (D-S) MOSFET

More results

类似说明 - IRF630MFP

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET Feb-1999
	IRF630S	85Kb / 8P	N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET Dec-1998
	IRF634	333Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Jul-2001
	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
	STP16NS25	330Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET May-2002
	STP8NS25	329Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Apr-2001
	STB19NF20	535Kb / 16P	N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET 16-Feb-2007
	IRF630	336Kb / 14P	N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET 03-Aug-2006
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006
	IRF-634	326Kb / 14P	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET 28-Jun-2006

More results

IRF630MFP 数据表(PDF) 1 Page - STMicroelectronics

IRF630MFP 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - IRF630MFP

类似说明 - IRF630MFP

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链接网址

IRF630MFP 数据表(PDF) 1 Page - STMicroelectronics

IRF630MFP 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - IRF630MFP

类似说明 - IRF630MFP

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数据表 下载

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