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STP9NK80Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP9NK80Z
功能描述  N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP9NK80Z 数据表(HTML) 3 Page - STMicroelectronics

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STP9NK80Z - STF9NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: DYNAMIC
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
800
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100µA
33.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.75 A
0.9
1.2
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 3.75 A
7.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1900
180
38
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 640V
75
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 400 V, ID = 3.75 A
RG =4.7Ω VGS = 10 V
(see Figure 19)
26
19
58
18
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640 V, ID = 7.5A,
RG =4.7Ω, VGS = 10V
(see Figure 20)
12
10
24
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640V, ID = 7.5 A,
VGS = 10V
(see Figure 22)
60
12
35
84
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
7.5
30
A
A
VSD (1)
Forward On Voltage
ISD = 7.5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7.5 A, di/dt = 100A/µs
VDD = 35V, Tj = 25°C
(see Figure 20)
530
4.5
17
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7.5 A, di/dt = 100A/µs
VDD = 35V, Tj = 150°C
(see Figure 20)
690
6.4
17
ns
µC
A



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