STGD6NC60HD datasheet(2/9 Pages) STMICROELECTRONICS

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STGD6NC60HD

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by max. junction temperature.

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Main Parameters

(#) Calculated according to the iterative formula:

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS = 0)

600

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC = 25°C (#)

Collector Current (continuous) at TC = 100°C (#)

ICM ( )

Collector Current (pulsed)

Diode RMS Forward Current at TC = 25°C

TBD

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.40

W/°C

Tstg

Storage Temperature

– 55 to 150

°C

Operating Junction Temperature

Min.

Typ.

Max.

Rthj-case

Thermal Resistance Junction-case

2.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

100

°C/W

Maximum Lead Temperature for Soldering Purpose (1.6 mm from

case, for 10 sec.)

275

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 1 mA, VGE = 0

600

ICES

Collector cut-off Current

(VGE = 0)

VCE = Max Rating, TC = 25 °C

VCE = Max Rating, TC = 125 °C

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20V , VCE = 0

±100

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250 µA

3.75

5.75

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 3 A

VGE = 15V, IC = 3 A, Tc= 125°C

1.9

1.7

2.5

()

JMAX

–

THJ

–

CE SAT M AX

() TC IC

()

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