STTH60L06 datasheet(2/6 Pages) STMICROELECTRONICS

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STTH60L06

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.93 x IF(AV) + 0.0045 IF

(RMS)

Table 6: Dynamic Characteristics

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

0.75

°C/W

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 150°C

160

1600

VF **

Forward voltage drop

Tj = 25°C

IF = 60A

1.55

Tj = 150°C

0.95

1.2

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = 50 A/µs VR =30V

105

IRM

Reverse recovery

current

Tj = 125°C IF = 60A

VR = 400V

dIF/dt = 100 A/µs

tfr

Forward recovery

time

Tj = 25°C

IF = 60A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

500

VFP

Forward recovery

voltage

Tj = 25°C IF = 60A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

Figure 1: Conduction losses versus average

forward current

Figure 2: Forward voltage drop versus forward

current

100

120

140

1020

3040

5060

7080

100

P(W)

δ=tp/T

δ = 1

δ = 0.05

δ = 0.1

(A)

F(AV)

δ = 0.5

δ = 0.2

100

120

140

160

180

200

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

(A)

T =150°C

(typical values)

T =25°C

(maximum values)

T =150°C

(maximum values)

(V)

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