FSB560 datasheet(2/5 Pages) ONSEMI

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Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300

μs, duty cycle ≤ 2.0%

Symbol

Parameter

Max.

Unit

Total Device Dissipation

500

Derate Above 25°C

mW/°C

RθJA

Thermal Resistance, Junction-to-Ambient

250

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0

BVCBO

Collector-Base Breakdown Voltage

IC = 100 μA, IE = 0

BVEBO

Emitter-Base Breakdown Voltage

IE = 100 μA, IC = 0

ICBO

Collector Cut-Off Current

VCB = 30 V, IE = 0

100

VCB = 30 V, IE = 0, TA = 100°C

μA

IEBO

Emitter Cut-Off Current

VEB = 4 V, IC = 0

100

hFE

DC Current Gain(4)

IC = 100 mA, VCE = 2 V

IC = 500 mA, VCE = 2 V

FSB560

100

300

FSB560A

250

550

IC = 1 A, VCE = 2 V

IC = 2 A, VCE = 2 V

VCE(sat)

Collector-Emitter Saturation

Voltage(4)

IC = 1 A, IB = 100 mA

300

IC = 2 A, IB = 200 mA

FSB560

350

FSB560A

300

VBE(sat)

Base-Emitter Saturation Voltage(4)

IC = 1 A, IB = 100 mA

1.25

VBE(on)

Base-Emitter On Voltage(4)

IC = 1 A, VCE = 2 V

Cobo

Output Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

Transition Frequency

IC = 100 mA, VCE = 5 V,

f = 100 MHz

MHz

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