FSB649 datasheet(3/5 Pages) ONSEMI

3 / 5 page

150

IC = 100 mA,VCE = 5 V, f=100MHz

Transition Frequency

VCB = 10 V, IE = 0, f = 1MHz

Output Capacitance

Cobo

SMALL SIGNAL CHARACTERISTICS

IC = 1 A, VCE = 2 V

Base-Emitter On Voltage

VBE(on)

1.25

IC = 1 A, IB = 100 mA

Base-Emitter Saturation Voltage

VBE(sat)

300

600

IC = 1 A, IB = 100 mA

IC = 3 A, IB = 300 mA

Collector-Emitter Saturation Voltage

VCE(sat)

300

100

IC = 50 mA, VCE = 2 V

IC = 1 A, VCE = 2 V

IC = 2 A, VCE = 2 V

IC = 6 A, VCE = 2 V

DC Current Gain

hFE

ON CHARACTERISTICS

100

VEB = 4V

Emitter Cutoff Current

IEBO

100

VCB = 30 V

VCB = 30 V, TA=100°C

Collector Cutoff Current

ICBO

IE = 100

µA

Emitter-Base Breakdown Voltage

BVEBO

IC = 100

µA

Collector-Base Breakdown Voltage

BVCBO

IC = 10 mA

Collector-Emitter Breakdown Voltage

BVCEO

OFF CHARACTERISTICS

Units

Max

Min

Test Conditions

Parameter

Symbol

NPN Low Saturation Transistor

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

*Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%

fsb649.lwpPrNC revA

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