BUT33

4

Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

TEST CIRCUIT

for

FREE–WHEEL

DIODE

PW Varied to Attain

IC = 100 mA

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 10 V

INDUCTIVE TEST CIRCUIT

t1 Adjusted to

Obtain IC

t1 [

Lcoil (ICM)

VCC

t2 [

Lcoil (ICM)

Vclamp

Test Equipment

Scope — Tektronix

475 or Equivalent

OUTPUT WAVEFORMS

1

INPUT

2

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

20

Ω

1

5 V

0

2

220

100

680 pF

100

PULSES

δ = 3%

33

2 W

33

2 W

160

D1

22

µF

D3

22

680 pF

MM3735

1N4934

D1 D2 D3 D4

2N3763

160

680 pF

22

D4

22

µF

D3

2N6438

+10 V

MR854

1

µF

2N6339

MR854

Ib1 ADJUST

dTb ADJUST

DRIVER

+

–

VD

ID

VD

ID

510

AV

up to

50 V

CRONETICS

PG130

up to

50 V

5

µs

dT

Ib2 ADJUST

VCC

ICM

VCEM

IC

VCE

t1

tf

t

tf Clamped

t2

TIME

Vclamp

t

1%

Ib2/Ib1

10

βf, FORCED GAIN

8

6

5

4

3

2

1

15

1

Figure 6. Fall Time versus IB2/IB1

Ib2/Ib1

0.1

2

3

4

5

6

7

8

9

10

5

2

1

Figure 7. Turn–Off Time versus IC

5

1

IC, COLLECTOR CURRENT (AMPS)

0.1

2

3

5

7

10

4

3

2

1

10

3

IC = 50 A

0.5

0.3

0.2

TC = 25°C

IC/IB = 5

20

30

50

Figure 8. Storage Time versus Forced Gain

Figure 9. Storage Time versus Ib2/Ib1

40

°C

IC = 25 A

1

2

3

4

5

6

7

8

9

10

1

2

3

4

5

6

7

8

9

10

IC = 25 A

IC = 50 A

TC = 25°C

VBE(off) = 5 V

0.5

0.3

0.2

IC/IB = 10

10 V

TC = 25°C

IC/IB = 20

tF

IC = 20 A

VBE(off) = 5 V

σ tF = 200 ns

σ tS = 400 ns

tS

10 V

IC = 25 A

IC = 50 A

10

8

6

5

4

3

2

1

TC = 25°C

IC/IB = 5

VBE(off) = 5 V

IC = 10 A