STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1)

Table 4: Thermal Data

(#) When mounted on 1inch² FR4, 2 Oz copper board.

Table 5: Avalanche Characteristics

Table 6: GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in-back-to-back Zener diodes have specifically been designed to enchance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

DPAK/IPAK

TO-92

500

V

500

V

Gate- source Voltage

±30

V

2.3

0.5

A

1.45

0.32

A

Drain Current (pulsed)

9.2

2

A

45

3

W

Derating Factor

0.36

0.025

W/°C

Gate source ESD (HBM-C=100 pF, R= 1.5K

Ω)

2000

V

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

DPAK

IPAK

TO-92

Unit

Rthj-case

Thermal Resistance Junction-case Max

2.77

--

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

50 (#)

100

120

°C/W

Rthj-lead

Thermal Resistance Junction-lead Max

--

--

40

°C/W

Maximum Lead Temperature For Soldering Purpose

275

260

°C

Symbol

Parameter

Max. Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

2.3

A

Single Pulse Avalanche Energy

120

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V