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BA40ZP 数据表(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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BA40ZP 数据表(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 3 page ![]() Pb Free Plating Product BA40ZP/BA40ZN 40 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator Pb BA40ZP/BA40ZN © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3 Rev.09T BLOCK/TO-230/BA/MR/K series Low leakage Low forward voltage drop High current capability High forward surge current capability Feature: Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon Diffused Diode alternative Special for Automotive AC Alternator rectifier application Technology: Latest Glass Passivation Pellet/Cu Clip Bonding Case: Vacuum soldered/Sintered temperature < 260 Cathode Polarity: As marked on body Lead: Plated lead, solderable per MIL-STD-202E method 208C Mounting: BLOCK/TO-230/BA/MR/K series package type Mechanical Data: Case Lead Suffix:"P" Positive Suffix:"N" Negative BA40ZP BA40ZN ℃ Lead Case MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • Ratings at 25℃ ambient temperature unless otherwise specified • Single Phase, half wave, 60Hz, resistive or inductive load • For capacitive load derate current by 20% BA40ZP/BA40ZN Electrical Characteristics @ 25℃ SYMBOLS MIN NOMINAL MAX UNITS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRRM VDC Volts Average Rectified Forward Current (Tc=125℃) Io Amps Repetitive Peak Reverse Surge Current Tc=10msec Dury Cycle<1% IRSM Amps Breakdown Voltage (Vbr@ir=100mA, Tc=25℃) Ir=90Amps, Tc=150℃, PW=80usec Vbr1 Vbr2 Volts Volts Forward Voltage Drop @If=100Amps<300usec VF 1.05 1.10 Volts Peak Forward Surge Current IFSM 500 Amps Reverse Leakage (VR=17Vdc) TA=25℃ IR 1.0 2.0 uAmps Operating and Storage Junction Temperature Range TJ ,TSTG -65 to +175 ℃ Notes: 1. Enough heatsink must be considered in application. Zener Voltage Transient Peak Reverse Voltage VRSM Vz 20 20 20 40 40 24 25 -27 32 40 |
类似零件编号 - BA40ZP |
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类似说明 - BA40ZP |
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