MS2210.PDF 4-15-03

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MS2210

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

ABSOLUTE MAXIMUM

ABSOLUTE MAXIMUM RATINGS

RATINGS

(Tcase = 25

°°C)

Symbol

Parameter

Value

Unit

Power Dissipation*

940

W

Device Current*

24

A

Collector-Supply Voltage*

50

Junction Temperature

+200

°°C

Storage Temperature

- 65 to + 200

°°C

Thermal Data

Thermal Data

Junction-Case Thermal Resistance*

0.16

°°C/W

•

Applies only to rated RF operation.

Features

• 255 MHz BANDWIDTH

• GOLD METALLIZATION

• EMITTER SITE BALLASTED

• Pout = 300W MINIMUM

• Gp = 7.0 dB

• LOW THERMAL RESISTANCE

• INPUT/OUTPUT MATCHING

• 15:1 VSWR CAPABILITY

DESCRIPTION:

DESCRIPTION:

The MS2210 avionics power transistor is a broadband, high peak

pulse power device specifically designed for avionics applications

requiring broad bandwidth with moderate duty cycle and pulse width

constraints such as ground/ship DME/TACAN. The MS2210 is also

designed for specialized applications where reduced power is

provided under pulse formats utilizing short pulse widths and high

burst or overall duty cycles

This device is capable of withstanding 15:1 VSWR mismatch load

conditions at any phase angle under full rated conditions.