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SSM3K56ACT 数据表(PDF) 1 Page - Toshiba Semiconductor |
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SSM3K56ACT 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page ![]() SSM3K56ACT 1 MOSFETs Silicon N-Channel MOS SSM3K56ACT SSM3K56ACT SSM3K56ACT SSM3K56ACT Start of commercial production 2015-11 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching 2. 2. 2. 2. Features Features Features Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. 3. 3. 3. Packaging and Pin Configuration Packaging and Pin Configuration Packaging and Pin Configuration Packaging and Pin Configuration CST3 1.Gate 2.Source 3.Drain 2015-11-16 Rev.1.0 ©2015 Toshiba Corporation |
类似零件编号 - SSM3K56ACT |
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类似说明 - SSM3K56ACT |
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