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ISCN109N 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCN109N 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor ISCN109N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 10A ; VCE= 4V 10 30 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.0MHz 250 pF fT Current-Gain—Bandwidth Product IE= 1A ; VCE= 12V 13 MHz |
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