STL71 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

STL71

2/6

Table 2: Absolute Maximum Ratings

Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 ms, duty cycle

≤ 1.5 %.

# The product is pre-selected in DC current gain (Group L and Group H). STMicroelectronics reserves the right to ship either groups accord-

ing to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

700

VCEO

Collector-Emitter Voltage (IB = 0)

400

VEBO

Emitter-Base Voltage (IC = 0)

Collector Current

0.6

ICM

Collector Peak Current (tp < 5ms)

1.5

Base Current

0.4

IBM

Base Peak Current (tp < 5ms)

0.75

Ptot

Total Dissipation at TC = 25 oC

0.95

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Rthj-amb

Thermal Resistance Junction-Ambient

Max

131.6

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off Current

(VBE = -1.5 V)

VCE = 700 V

250

µA

IEBO

Emitter-Cut-off Current

(IC = 0 )

VEB = 9 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 1 mA

400

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 0.1 A

IB = 20 mA

IC = 0.2 A

IB = 40 mA

IC = 0.3 A

IB = 60 mA

0.15

0.2

0.4

0.5

VBE(sat)* Base-Emitter Saturation

Voltage

IC = 0.2 A

IB = 40 mA

0.8

hFE

DC Current Gain #

IC = 0.2 A

VCE = 5 V

Group L

Group H

IC = 0.6 A

VCE = 10 V

INDUCTIVE LOAD

Fall Time

IC = 0.2

VClamp = 300 V

IB1 = -IB2 = 40 mA

L = 3mH

(see figure 3)

0.3

µs

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