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STTH2R06 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH2R06
功能描述  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH2R06 数据表(HTML) 4 Page - STMicroelectronics

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Figure 7: Relative variations of dynamic
parameters versus junction temperature
Figure 8: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 9: Forward recovery time versus dIF/dt
(typical values)
Figure
10:
Junction
capacitance
versus
reverse voltage applied (typical values)
Figure 11: Thermal resistance junction to
ambient versus copper surface under each
lead (epoxy FR4, eCU=35µm) (SMA/SMB/SMC)
Figure 12: Thermal resistance versus lead
length (DO-41)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
IRM
QRR
trr
T (°C)
j
I=I
Reference: T =125°C
F
F(AV)
j
V =400V
R
0
5
10
15
20
25
30
0
50
100
150
200
250
V
(V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
0
50
100
150
200
250
300
0
50
100
150
200
250
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
V
=1.1 x V max.
FR
F
1
10
100
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
R
(°C/W)
th(j-a)
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SMA
SMB
SMB
S
(cm²)
CU
0
20
40
60
80
100
120
5
1015
2025
R (°C/W)
th
L
(mm)
lead
Rth(j-a)
Rth(j-l)



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