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STTH2R06U 数据表(PDF) 1 Page - STMicroelectronics |
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STTH2R06U 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() ® 1/9 Table 1: Main Product Characteristics IF(AV) 2 A VRRM 600 V Tj 175°C VF (typ) 1 V trr (typ) 35 ns STTH2R06 HIGH EFFICIENCY ULTRAFAST DIODE Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward voltage 7 A IF(AV) Average forward current δ = 0.5 DO-41 TL = 70°C 2A SMA TL = 85°C SMB TL = 100°C SMC TL = 115°C IFSM Surge non repetitive forward current DO-41 tp = 10ms sinusoidal 40 A SMA / SMB / SMC 30 Tstg Storage temperature range -65 to + 175 °C Tj Operating junction temperature range -40 to + 175 °C SMA STTH2R06A SMC STTH2R06S DO-41 STTH2R06 K A SMB STTH2R06U June 2005 REV. 2 FEATURES AND BENEFITS ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature DESCRIPTION The STTH2R06 is using ST Turbo 2 600V planar Pt doping technology. It is specially suited for switching mode base drive & transistor circuits. Packaged in axial, SMA, SMB and SMC, this de- vice is intended for use in high frequency inverters, free wheeling and polarity protection. Table 2: Order Codes Part Number Marking STTH2R06 STTH2R06 STTH2R06RL STTH2R06 STTH2R06A R6A STTH2R06U R6U STTH2R06S R62 |
类似零件编号 - STTH2R06U |
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类似说明 - STTH2R06U |
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