J308 J309 J310

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.

C3 = C4 = 8.35 pF Erie #539–002D.

C5 = C6 = 5000 pF Erie (2443–000).

C7 = 1000 pF, Allen Bradley #FA5C.

RFC = 0.33

µH Miller #9230–30.

L1 = One Turn #16 Cu, 1/4

″ I.D. (Air Core).

L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).

L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).

50

Ω

SOURCE

50

Ω

LOAD

U310

C3

C2

C6

C7

C4

1.0 k

RFC

L1

L2P

L2S

+VDD

C1

C5

Figure 1. 450 MHz Common–Gate Amplifier Test Circuit

70

60

50

40

30

20

–5.0

–4.0

–3.0

–2.0

–1.0

0

ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)

10

0

70

60

50

40

30

20

10

IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)

Figure 2. Drain Current and Transfer

Characteristics versus Gate–Source Voltage

VDS = 10 V

IDSS

+25

°C

TA = – 55°C

+25

°C

+25

°C

–55

°C

+150

°C

+150

°C

VGS, GATE–SOURCE VOLTAGE (VOLTS)

5.0

4.0

3.0

2.0

1.0

0

35

30

25

20

15

10

5.0

0

Figure 3. Forward Transconductance

versus Gate–Source Voltage

VDS = 10 V

f = 1.0 MHz

TA = – 55°C

+25

°C

+150

°C

+25

°C

–55

°C

+150

°C

ID, DRAIN CURRENT (mA)

100 k

10 k

1.0 k

100

1.0 k

100

10

1.0

0.01

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

VGS(off) = – 2.3 V =

VGS(off) = – 5.7 V =

Figure 4. Common–Source Output

Admittance and Forward Transconductance

versus Drain Current

Yfs

Yfs

Yos

VGS, GATE SOURCE VOLTAGE (VOLTS)

5.0

4.0

3.0

2.0

1.0

0

6.0

7.0

8.0

9.0

10

10

7.0

4.0

1.0

0

120

96

72

48

24

0

RDS

Cgs

Cgd

Figure 5. On Resistance and Junction

Capacitance versus Gate–Source Voltage