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STL72 数据表(PDF) 2 Page - STMicroelectronics |
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STL72 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() STL72 2/6 Table 2: Absolute Maximum Ratings Table 3: Thermal Data Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. # The product is pre-selected in DC current gain (Group L and Group H). STMicroelectronics reserves the right to ship either groups accord- ing to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9V IC Collector Current 1A ICM Collector Peak Current (tp < 5ms) 2A IB Base Current 0.5 A IBM Base Peak Current (tp < 5ms) 1A Ptot Total Dissipation at TC = 25 oC 1W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Rthj-amb Thermal Resistance Junction-Ambient Max 120 oC/W Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector Cut-off Current (VBE = -1.5 V) VCE = 700 V VCE = 700 V Tj = 125 oC 1 5 mA mA IEBO Emitter-Cut-off Current (IC = 0 ) VEB = 9 V 1 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) IC = 1 mA L = 25 mH 400 V VCE(sat)* Collector-Emitter Saturation Voltage IC = 0.2 A IB = 40 mA IC = 0.4 A IB = 80 mA 0.15 0.25 0.4 0.5 V V VBE(sat)* Base-Emitter Saturation Voltage IC = 0.4 A IB = 80 mA 0.95 1.1 V hFE DC Current Gain # IC = 0.4 A VCE = 5 V Group L Group H IC = 1 A VCE = 10 V 10 15 5 16 23 15 tf INDUCTIVE LOAD Fall Time IC = 0.25 VClamp = 300 V IB1 = -IB2 = 50 mA L = 3mH (see figure 3) 0.3 µs |
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