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STL72 数据表(PDF) 2 Page - STMicroelectronics

部件名 STL72
功能描述  MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL72 数据表(HTML) 2 Page - STMicroelectronics

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STL72
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Table 2: Absolute Maximum Ratings
Table 3: Thermal Data
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300 ms, duty cycle
≤ 1.5 %.
# The product is pre-selected in DC current gain (Group L and Group H). STMicroelectronics reserves the right to ship either groups accord-
ing to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
700
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0)
9V
IC
Collector Current
1A
ICM
Collector Peak Current (tp < 5ms)
2A
IB
Base Current
0.5
A
IBM
Base Peak Current (tp < 5ms)
1A
Ptot
Total Dissipation at TC = 25 oC
1W
Tstg
Storage Temperature
-65 to 150
°C
TJ
Max. Operating Junction Temperature
150
°C
Rthj-amb
Thermal Resistance Junction-Ambient
Max
120
oC/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off Current
(VBE = -1.5 V)
VCE = 700 V
VCE = 700 V
Tj = 125 oC
1
5
mA
mA
IEBO
Emitter-Cut-off Current
(IC = 0 )
VEB = 9 V
1
mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0 )
IC = 1 mA
L = 25 mH
400
V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 0.2 A
IB = 40 mA
IC = 0.4 A
IB = 80 mA
0.15
0.25
0.4
0.5
V
V
VBE(sat)* Base-Emitter Saturation
Voltage
IC = 0.4 A
IB = 80 mA
0.95
1.1
V
hFE
DC Current Gain #
IC = 0.4 A
VCE = 5 V
Group L
Group H
IC = 1 A
VCE = 10 V
10
15
5
16
23
15
tf
INDUCTIVE LOAD
Fall Time
IC = 0.25
VClamp = 300 V
IB1 = -IB2 = 50 mA
L = 3mH
(see figure 3)
0.3
µs



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