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STP60NF10 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP60NF10
功能描述  N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP60NF10 数据表(HTML) 3 Page - STMicroelectronics

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STB60NF10 STP60NF10
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 40 A
RG =4.7 Ω
VGS = 10 V
(Resistive Load, Figure )
17
56
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 50V ID= 80A VGS= 10V
104
20
32
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 40 A
RG =4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
82
23
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSD (*)
Forward On Voltage
ISD = 80 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A
di/dt = 100A/µs
VDD = 50 V
Tj = 150°C
(see test circuit, Figure 5)
92
340
7.4
ns
µC
A
ELECTRICAL CHARACTERISTICS (continued)
Figure 4: Thermal Impedance
Figure 3: Safe Operating Area



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