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DTC501 数据表(PDF) 2 Page - First Silicon Co., Ltd |
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DTC501 数据表(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 3 page ![]() 2008. 1. 28 2/3 DTC501 Revision No : 0 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VBE = 6.0 V) IEBO – – 1.5 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 15 – Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) VCE(sat) – – 0.25 Vdc VOL – – 0.2 Vdc 3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) Output Voltage (on) 3.3 R1/R2 Resistor Ratio Input Resistor R1 kΩ (VCC = 5.0 V, VB= 0.25 V, RL= 1.0 kΩ) Output Voltage (off) VOH – Vdc 4.9 30 0.8 1.0 1.2 4.7 – 6.1 |
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