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DTC504 数据表(PDF) 1 Page - First Silicon Co., Ltd

部件名 DTC504
功能描述  Digital transistors (built-in resistors)
PDF  4 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

DTC504 数据表(HTML) 1 Page - First Silicon Co., Ltd

  DTC504 Datasheet HTML 1Page - First Silicon Co., Ltd DTC504 Datasheet HTML 2Page - First Silicon Co., Ltd DTC504 Datasheet HTML 3Page - First Silicon Co., Ltd DTC504 Datasheet HTML 4Page - First Silicon Co., Ltd  
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2007. 12. 03
1/4
SEMICONDUCTOR
TECHNICAL DATA
DTC504
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to allow
positive biasing of the input. They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/ off conditions need to be set for operation, making device design
easy.
• Structure
NPN digital transistor (with built-in resistors)
• Equivalent circuit
• Elecrical characteristics(Ta= 25°C)
Parameter
symbol
Min.
Max.
Unit
Conditions
Input voltage
VI(off)
V
V
mA
VCC= 5V,IO = 100µA
VI(on)
Output Voltage
t
n
e
r
r
u
c
t
u
p
n
I
I I
I
V = 5V
t
n
e
r
r
u
c
t
u
p
t
u
O
I O(off)
µA
-
VCC= 50V,VI = 0 V
DC current gain
Input resistance
KΩ
-
MHz
-
Resistance ratio
Transition frequency
*Transition frequency of the device
• Absolute maximum ratings(Ta= 25 °C)
Parameter
Supply voltage
V
50
Input voltage
–10~+40
Output current
I O
30
mA
IC(Max )
100
Power dissipation
150
Junction temperature
C
°
150
Storage temperature
–55~+150
Digital transistors (built-in resistors)
OUT
GND
R1
R2
IN
1
3
2
SC-89
Device
Marking
Shipping
DTC504
3000/Tape&Reel
• Device Marking
8C
• We declare that the material of productcompliance with
RoHS requirements.
1
2
3
symbol
limit
unit
V
j
T
stg
T
d
P
cc
V
IN
V
200
300
m
W
C
°
Typ.
O(on)
V
I
G
1
R
2 / R1
R
T
f
-
3
-
-
-
68
32.9
0.8
-
-
-
-
-
-
-
47
1
250
0.5
-
0.3
0.18
0.5
-
61.1
1.2
-
O = 0.3V,IO = 2mA
V
O/II =10mA/0.5mA
I
O= 5V,IO = 5mA
V
-
CE = 10V,IE = – 5 mA,f=100MHz*
V


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