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DTC504 数据表(PDF) 1 Page - First Silicon Co., Ltd |
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DTC504 数据表(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page ![]() 2007. 12. 03 1/4 SEMICONDUCTOR TECHNICAL DATA DTC504 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/ off conditions need to be set for operation, making device design easy. • Structure NPN digital transistor (with built-in resistors) • Equivalent circuit • Elecrical characteristics(Ta= 25°C) Parameter symbol Min. Max. Unit Conditions Input voltage VI(off) V V mA VCC= 5V,IO = 100µA VI(on) Output Voltage t n e r r u c t u p n I I I I V = 5V t n e r r u c t u p t u O I O(off) µA - VCC= 50V,VI = 0 V DC current gain Input resistance KΩ - MHz - Resistance ratio Transition frequency *Transition frequency of the device • Absolute maximum ratings(Ta= 25 °C) Parameter Supply voltage V 50 Input voltage –10~+40 Output current I O 30 mA IC(Max ) 100 Power dissipation 150 Junction temperature C ° 150 Storage temperature –55~+150 Digital transistors (built-in resistors) OUT GND R1 R2 IN 1 3 2 SC-89 Device Marking Shipping DTC504 3000/Tape&Reel • Device Marking 8C • We declare that the material of productcompliance with RoHS requirements. 1 2 3 symbol limit unit V j T stg T d P cc V IN V 200 300 m W C ° Typ. O(on) V I G 1 R 2 / R1 R T f - 3 - - - 68 32.9 0.8 - - - - - - - 47 1 250 0.5 - 0.3 0.18 0.5 - 61.1 1.2 - O = 0.3V,IO = 2mA V O/II =10mA/0.5mA I O= 5V,IO = 5mA V - CE = 10V,IE = – 5 mA,f=100MHz* V |
类似零件编号 - DTC504 |
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类似说明 - DTC504 |
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