2SA2098 / 2SC5887

No.7495-1/5

Applications

•

Relay drivers, lamp drivers, motor drivers.

Features

•

Adoption of MBIT processes.

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7495

2SA2098 / 2SC5887

Package Dimensions

unit : mm

2041A

[2SA2098 / 2SC5887]

22004 TS IM TA-3725, 3726

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP / NPN Epitaxial Planar Silicon Transistors

High-Current Switching Applications

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220ML

1.6

1.2

0.75

10.0

3.2

2.55

2.55

2.4

4.5

2.8

0.7

2.55

2.55

1

23

Specifications

( ) : 2SA2098

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--50)60

V

Collector-to-Emitter Voltage

VCEO

(--)50

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)15

A

Collector Current (Pulse)

ICP

(--)20

A

Base Current

IB

(--)3

A

Collector Dissipation

PC

2W

Tc=25

°C30

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)40V, IE=0

(--)10

µA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0

(--)10

µA

DC Current Gain

hFE

VCE=(--)2V, IC=(--)1A

180

(400)560

Gain-Bandwidth Product

fT

VCE=(--)10V, IC=(--)1A

(200)300

MHz

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