IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 40N30

IXGH 40N30A

IXGH 40N30B

IXGH 40N30S IXGH 40N30AS

IXGH 40N30BS

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

1

2

3

TO-247 SMD Outline

1 - Gate

3 - Source (Emitter

2 - Drain (collector)

4 - Drain (collector

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.83

5.21

.190

.205

A1

2.29

2.54

.090

.100

A2

1.91

2.16

.075.085

b

1.14

1.40

.045.05

5

b1

1.19

2.13

.075.084

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45 BSC

.215 BSC

L

4.90

5.10

.193

.201

L1

2.70

2.90

.106

.114

L2

2.10

2.30

.083

.091

L3

0.00

0.10

.000

.004

L4

1.90

2.10

.075.083

∅P

3.55

3.65

.140

.144

Q

5.59

6.20

.220

.244

R

4.32

4.83

.170

.190

S

6.15 BSC

.242 BSC

Min. Recommended Footprint

(Dimensions in inches and mm)

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

20

28S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

2500

pF

C

oes

V

210

pF

C

res

60

pF

Q

g

145

170

nC

Q

ge

I

23

35

nC

Q

gc

50

75

nC

t

d(on)

25

ns

t

ri

40

ns

t

d(off)

40N30

170

ns

40N30A

100

ns

40N30B

75

ns

t

fi

40N30

230

ns

40N30A

120

ns

40N30B

75

ns

E

off

40N30

1.6

mJ

40N30A

0.75

mJ

40N30B

0.3

mJ

t

d(on)

25

ns

t

ri

40

ns

E

on

0.3

mJ

t

d(off)

40N30

250

500

ns

40N30A

150

300

ns

40N30B

90

180

ns

t

fi

40N30

350

600

ns

40N30A

220

330

ns

40N30B

130

230

ns

E

off

40N30

3.3

4.8mJ

40N30A

1.6

2.4

mJ

40N30B

0.6

1.4

mJ

R

thJC

0.62 K/W

R

thCK

0.25

K/W

Inductive load, T

I

L = 100

µH,

V

R

Switching times may

increase for V

> 0.8 V

increased R

G

Inductive load, T

I

L = 100

µH

V

R

Switching times may

increase for V

> 0.8 V

increased R

G