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RFASWB438ATF09 数据表(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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RFASWB438ATF09 数据表(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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2 / 8 page ![]() Preliminary Product Information Page 2 of 8 ASC_RFASWB438ATF09_V01 Apr. 2017 Decoder RF4 RF2 RF3 RF1 VC1 VC2 FEATURES Low Insertion Loss :1.2dB typ. @ 6.0GHz High Isolation :16dB typ. @ 6.0GHz Low control voltage :1.8 to 3.4 V High ESD tolerance of 1.5kV HBM at all pins : Miniature footprint :LGA package,1.5 x 1.5 x 0.51 mm3 Description The RFASWB438ATF09 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch with an integrated General Purpose Input Output (GPIO) control. The RFASWB438ATF09 maintains low insertion and high isolation, which makes it an ideal choice for Multi-Mode, GSM, EDGE, UMTS, and TLE handset applications. The RFASWB438ATF09 is ideally suited for applications where high linearity, high isolation, low insertion loss, low current consumption, and small size are required. No blocking capacitor requirement on the RF paths ad long as no DC voltage is applied. The RFASWB438ATF09 is manufactured in a compact, 1.5 x 1.5 x 0.51 mm3 package. Application Multi-mode 3G/4G, LTE TRx system. Block Diagram and Pin Out (Top View) Pin Names and Descriptions Pin Name Description Pin Name Description 1 ANT2 Antenna 2 RF port 4 TX Transmit RF port 2 VC2 DC Control Voltage 2 5 VC1 DC Control Voltage 1 3 RX Receive RF port 6 ANT1 Antenna 1 RF port 1 2 3 6 5 4 |
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