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RFASWB643ATF09 数据表(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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RFASWB643ATF09 数据表(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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2 / 8 page ![]() Approval Sheet Page 2 of 8 ASC_RFASWB643ATF09_V02 Apr. 2018 FEATURES Low Insertion Loss :0.45dB typ. @ 2.7GHz High Isolation :27dB typ. @ 2.7GHz Low control voltage :1.3 to 2.7 V : Miniature footprint :2.0 x 2.0 x 0.55 mm3 Moisture Sensitive Level 3 (MSL3) : High ESD tolerance of 2kV HBM at all pins Description The RFASWB643ATF09 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch in a low cost miniature QFN (2.0x2.0 x0.55mm3) package. Typical applications are for SV-LTE ,LTE-A and diversity antenna switching. The RFASWB643ATF09 is ideally suited for applications where high power, high linearity, low insertion loss, and small size are required. The RFASWB643ATF09 has ESD protection devices to achieve excellent ESD performances. Application 2G/3G/4G multimode cellular handsets (LTE, UMTS, CDMA2000, EDGE, GSM, TDD-LTE, TD-SCDMA) Block Diagram and Pin Out (Top View) RF3 RF1 RF2 VDD VC1 Bias Decoder RF4 1 2 3 4 5 6 7 8 9 10 11 12 Pin Names and Descriptions Pin Name Description Pin Name Description 1 VDD DC power supply 7 RF1 RF path 1 2 N/C No connected 8 N/C No connected 3 VC1 Control voltage 1 9 RF4 RF path 4 4 GND Ground 10 GND Ground 5 RF2 RF path 2 11 path3 RF path 3 6 GND Ground 12 GND Ground |
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