Approval Sheet

Page 4 of 14

ASC_RFASWD658FTF03_V02

Mar. 2018

Table 2. RFASWD658FTF03 Absolute Maximum Ratings

Parameter

Symbol

Minimum

Maximum

Units

Supply Voltage

VDD

-0.3

3.5

V

Interface Supply Voltage

VIO

-0.3

2.0

V

Control Input/ Output Voltage Range (SDATA, SCLK)

-0.3

2.0

V

TRXx Input Power (f = 698 ~ 2690 MHz, 50

Ω, CW)

Pin

+26

dBm

Storage temperature

-45

+125

°C

Operating temperature

-30

+90

°C

HBM ESD Voltage, All Pins

2000

V

MM ESD Voltage, All Pins

190

V

Note 1 : Human Body Model ESD Voltage (HBM, MIL_STD 883 Method 3015.7)

Note 2 : Machine Model ESD Voltage (MM, JEITA EIAJ ED-4701)

Exceeding absolute maximum ratings may cause permanent damage. Operation between operating range maximum and

absolute maximum for extended periods may reduce reliability.

Electrical and Mechanical Specifications



The absolute maximum ratings of the RFASWD658FTF03 are provided in Table 2. Electrical specifications are

provided in Tables 3 and 5.



Figure 4, 5 and Table4 describes the RFASWD658FTF03 has four operating states.



IMD2 and IMD3 test conditions for various frequencies are listed in Tables 6 and 7, respectively.



Figure 6, 7, 8, 9 and Table 8 show the important parameters for SCLK and SDATA required for proper operations of

the Toshiba MIPI RFFE slave interface.



Table 9 register mapping shows the list of the registers inside the RFASWD658FTF03.



Table 10 provides the switch control register.



Table 11, 12 and 13 describes the detail information of RFFE status, power mode and trigger states, respectively.



Figure 10 and Table 14 describes the solder land pad and dimensions.

Table 3. RFASWD658FTF03 DC Electrical Specifications (Note 1)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

VDD

2.5

2.8

3.5

V

Interface supply voltage

VIO

1.65

1.80

1.95

V

Interface signal:

High

Low

SDATA

0.8 × VIO

0

VIO

0.2 × VIO

V

V

VIO Supply Current

9

μA

Note 1 : Performance is guaranteed only under the conditions listed in this Table.