1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector

applications. They are readily adaptable to many other fast switching RF and digital

applications. They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements. They are also

available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V

• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301

MBD301

MMBD301LT1

Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

Volts

Forward Power Dissipation

@ TA = 25°C

Derate above 25

°C

PF

280

2.8

200

2.0

mW

mW/

°C

Operating Junction

Temperature Range

TJ

– 55 to +125

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

DEVICE MARKING

MMBD301LT1 = 4T

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 µA)

V(BR)R

30

—

—

Volts

Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1

CT

—

0.9

1.5

pF

Reverse Leakage (VR = 25 V) Figure 3

IR

—

13

200

nAdc

Forward Voltage (IF = 1.0 mAdc) Figure 4

VF

—

0.38

0.45

Vdc

Forward Voltage (IF = 10 mAdc) Figure 4

VF

—

0.52

0.6

Vdc

NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MBD301/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MBD301

MMBD301LT1

Motorola Preferred Devices

CASE 182– 02, STYLE 1

(TO–226AC)

CASE 318 – 08, STYLE 8

SOT– 23 (TO – 236AB)

1

2

3

1

2

3

CATHODE

1

ANODE

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

2

CATHODE

1

ANODE