CSD1306F datasheet(1/3 Pages) CDIL

部件名	CSD1306F

功能描述	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

标志

1 / 3 page

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSD1306 (SAW)

SOT-23

Formed SMD Package

Marking

CSD1306E=06

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNITS

Collector Base Voltage

VCBO

V

Collector Emitter Voltage

VCEO

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

mA

Collector Current Peak

ICP

A

Power Dissipation @ Ta=25ºC

PD

mW

Operating and Storage Junction

Temperature Range

Tj, Tstg

ºC

Electrical Characterstics (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Voltage

VCBO

IC=10µA, IE=0

30

V

Collector Emitter Voltage

VCEO

IC=10mA, IB=0

15

V

Emitter Base Voltage

VEBO

IE=1µA, IC=0

5

V

Collector Cut off Current

ICBO

VCB=20V, IE=0

1.0

µA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

1.0

µA

Base Emitter On Voltage

VBE (on)

VCE =1V, IC=150mA

1.0

V

Collector Emitter Saturation

Voltage

VCE (sat)

IC=500mA, IB=50mA

0.5

V

DC Current Gain

hFE

VCE =1V, IC=150mA

250

1200

Transition Frequency

fT

VCE=1V, IC=150mA,

250

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

10

pF

Input Capacitance

Cib

VEB=0.5V, IC=0, f=1MHz

100

pF

hFE Classification

CSD1306ERev_3 300103E

D : 250 - 500

E : 300 - 800

F : 600 -1200

1

VALUE

30

15

5

700

200

- 55 to +150

PIN CONFIGURATION (NPN)

1 = BASE

2 = EM ITTER

3 = COLLECTOR

2

1

3

IS/ISO 9002

Lic# QSC/L-000019.3

Continental Device India Limited

Data Sheet

Page 1 of 3

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