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ISC4A131P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISC4A131P
功能描述  isc Triacs
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISC4A131P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISC4A131P Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISC4A131P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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background image
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
isc Triacs
ISC4A131P
FEATURES
·
With TO-220AB insulated package
·
Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching
·
Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak reverse voltage
800
V
IT(RMS)
RMS on-state current (full sine wave)Tj=105℃
6
A
ITSM
Non-repetitive peak on-state current tp=20ms
60
A
Tj
Operating junction temperature
110
Tstg
Storage temperature
-45~150
Rth(j-c)
Thermal resistance, junction to case
2.7
/W
Rth(j-a)
Thermal resistance, junction to ambient
60
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110
0.01
0.5
mA
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110
0.01
0.5
mA
IGT
Gate trigger current
VD=12V; RL= 30Ω
10
mA
10
10
25
IH
Holding current
IGT= 0.1A, Gate Open
25
mA
VGT
Gate trigger voltage all quadrant VD=12V; RL= 30Ω
1.3
V
VTM
On-state voltage
IT= 8.5A; tp= 380μs
1.65
V


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