SMP80MC datasheet(3/9 Pages) STMICROELECTRONICS

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SMP80MC

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Table 4: Thermal Resistances

Table 5: Electrical Characteristics (Tamb = 25°C)

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (with recommended footprint)

100

°C/W

Rth(j-l)

Junction to leads

°C/W

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VBO

Breakover voltage

IRM

Leakage current

IPP

Peak pulse current

IBO

Breakover current

Holding current

Continuous reverse voltage

Leakage current at VR

Capacitance

Types

IRM @ VRM

IR @ VR

Dynamic

VBO

Static

VBO @ IBO

max.

min.

typ.

note1

note 2

note 3

note 4 note 5 note 6

µAVµAV

SMP80MC-120

108

120

155

800

150

SMP80MC-140

126

140

180

SMP80MC-160

144

160

205

SMP80MC-200

180

200

255

SMP80MC-230

207

230

295

SMP80MC-270

243

270

345

Note 1: IR measured at VR guarantee VBR min

≥ VR

Note 2: see functional test circuit 1

Note 3: see test circuit 2

Note 4: see functional holding current test circuit 3

Note 5: VR = 50V bias, VRMS=1V, F=1MHz

Note 6: VR = 2V bias, VRMS=1V, F=1MHz

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