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MP3378EGF 数据表(PDF) 18 Page - Monolithic Power Systems |
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MP3378EGF 数据表(HTML) 18 Page - Monolithic Power Systems |
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18 / 23 page ![]() MP3378E – 4-CHANNEL WLED CONTROLLER WITH BUCK CONVERTER MP3378E Rev. 1.02 www.MonolithicPower.com 18 5/26/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. Selecting the Power MOSFET The critical parameters for selecting a MOSFET are listed below: 1. Maximum drain-to-source voltage, VDS(MAX). 2. Maximum current, ID(MAX). 3. On-resistance, RDS(ON). 4. Gate source charge (QGS) and gate drain charge (QGD). 5. Total gate charge (QG). Ideally, the off-state voltage across the MOSFET is equal to the output voltage. Considering the voltage spike when it turns off, VDS(MAX) should be greater than 1.5 times the output voltage. The maximum current through the power MOSFET occurs at the minimum input voltage and the maximum output power. The maximum RMS current through the MOSFET is given by Equation (7) and Equation (8): RMS(MAX) IN1(MAX) MAX I I D , where: (7) OUT1 IN1(MIN) MAX OUT1 VV D V (8) The current rating of the MOSFET should be greater than 1.5xIRMS. The on resistance of the MOSFET determines the conduction loss, which is given by Equation (9): k R I P (on) DS 2 RMS cond (9) Where k is the temperature coefficient of the MOSFET. The switching loss is related to QGD and QGS1, which determine the commutation time. QGS1 is the charge between the threshold voltage and the plateau voltage when a driver charges the gate, which can be read in the VGS vs QG chart of the MOSFET datasheet. QGD is the charge during the plateau voltage. These two parameters are needed to estimate the turn-on and turn-off losses and can be calculated with Equation (10): SW1 IN1 DS PLT DR GD SW1 IN1 DS TH DR G GS1 I V V V R Q I V V V R Q f f P G SW (10) Where VTH is the threshold voltage, VPLT is the plateau voltage, RG is the gate resistance, and VDS is the drain source voltage. Please note that calculating the switching loss is the most difficult part in the loss estimation. The formula above is a simplified equation. For a more accurate estimation, the equation becomes much more complex. The total gate charge (QG) is used to calculate the gate drive loss. See Equation (11): DR G DR SW1 P Q V f (11) Where VDR is the drive voltage. Selecting the Output Capacitor The output capacitor keeps the output voltage ripple small and ensures feedback loop stability. The output capacitor impedance must be low at the switching frequency. Ceramic capacitors with X7R dielectrics are recommended for their low ESR characteristics. For most applications, a 4.7 μF ceramic capacitor in parallel with a 22μF electrolytic capacitor is sufficient. Setting the Over-Voltage Protection The open-string protection is achieved through the detection of the voltage on OVP. In some cases, an LED string failure results in a feedback voltage of zero. The part then boosts the output voltage higher and higher. If the output voltage reaches the programmed OVP threshold, the protection will be triggered. To ensure the chip functions properly, select the resistor values for the OVP resistor divider to provide an appropriate set voltage. The recommended OVP point is about 1.1 to 1.2 times higher than the output voltage for normal operation. See Equation (12): HIGH OVP LOW R V 1.23 (1 ) R (12) Selecting the Dimming Control Mode Two different dimming methods are provided: 1. Direct PWM Dimming An external PWM dimming signal is employed to achieve PWM dimming control. Apply a PWM dimming signal (ranging from 100Hz to 20kHz) to PWM. The minimum recommended amplitude of the PWM signal is 1.5V, and the low level should be less than 0.4V (see Table 1). |
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