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EMZ1 数据表(PDF) 2 Page - First Silicon Co., Ltd

部件名 EMZ1
功能描述  Dual NPNPNP transistors
PDF  4 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

EMZ1 数据表(HTML) 2 Page - First Silicon Co., Ltd

  EMZ1 Datasheet HTML 1Page - First Silicon Co., Ltd EMZ1 Datasheet HTML 2Page - First Silicon Co., Ltd EMZ1 Datasheet HTML 3Page - First Silicon Co., Ltd EMZ1 Datasheet HTML 4Page - First Silicon Co., Ltd  
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2017. 08. 30
2/4
Revision No : 0
EMZ1
TR1 NPN ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
T
yp
Max
U
nit
Collector-base breakdown voltage
V(BR)CBO IC=50μA,IE=0
0
6
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
0
5
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=1mA
120
560
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5 A
m
0.4
V
Transition frequency
fT
VCE=12V,IC=2mA,f=100MHz
180
MHz
Collecto r output capacitance
Cob
VCB=12V,IE=0,f=1MHz
3.5
pF
TR2 PNP ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
T
yp
M
ax
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-50μA,IE=0
0
6
-
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
0
5
-
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
6
-
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
120
560
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA,IB=-5mA
-0.5
V
Transition frequency
fT
VCE=-12V,IC=-2mA,f=100MHz
140
MHz
Collector output capacitance
Cob
VCB=-12V,IE=0,f=1MHz
5
pF



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