SEMICONDUCTOR

TECHNICAL DATA

ES3AB ~ ES3JB

2011. 10. 28

1/2

Revision No : 0

Super Fast Recovery Rectifier Diode

■ Features

■ Outline Dimensions and Mark

●I

o

3.0A

● V

RRM

50V-600V

● High surge current capability

● Cases: Molded plastic

■ Applications

● Rectifier

■ Limiting Values (Absolute Maximum Rating)

ES3

Item

Symbol

Unit

Test Conditions

AB BB CB

DB FB GB

HB JB

Repetitive Peak Reverse Voltage

V

50

100

150 200

300

400

500

600

Average Forward Current

A

60HZ Half-sine wave, Resistance

3.0

Surge(Non-repetitive)Forward

Current

A

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

100

Junction Temperature

℃

-55~+150

Storage Temperature

℃

-55 ~ +150

■ Electrical Characteristics (Ta=25

Unless otherwise specified)

ES3

Item

Symbol

Unit

Test Condition

AB BB CB

DB FB GB

HB JB

Peak Forward Voltage

V

F

V

I

0.95

1.3

1.7

Maximum reverse recovery

time

ns

5

3

A

5

2

.

0

=

I

RRM1

Ta =25℃

10

Peak Reverse Current

I

RRM2

μA

Ta =100℃

500

Between junction and ambient

47

1)

Thermal

Resistance(Typical)

/W

℃

Between junction and terminal

12

1)

Notes:

1)

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

D im en sion s in in che s an d (m illim eters)

DO-214AA(SM B)

.1 87(4.75)

.1 67(4.25)

.155 (3.9 4)

.130 (3.3 0)

.0 85(2.15)

.0 73(1.85)

.1 03(2.61)

.0 78(1.99)

.056 (1.4 1)

.035 (0.9 0)

.0 08(0.20)

.0 04(0.10)

.0 12(0.31)

.0 06(0.15)

0 .08 1(2 .072)

0 .228

(5.8 0)

M oun ting P ad La you t

0.069

(1.76)

0.1 07

(2 .72)

.220 (5.5 9)

.205 (5.2 1)